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| Transistors 2SC2206 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1254 6.90.1 Unit: mm 2.50.1 (1.0) (1.5) (0.4) (1.5) s Features q q q 1.00.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO CEBO IC PC Tj Tstg Ratings 30 20 5 30 400 150 -55 ~ +150 Unit V 3 2 (2.5) 1 V V mA mW C C 1:Base 2:Collector 3:Emitter (2.5) 1.250.05 s Absolute Maximum Ratings (0.85) 2.40.2 0.450.05 (Ta=25C) 0.550.1 M-A1 Package s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise figure Common emitter reverse transfer capacitance Reverse transfer impedance (Ta=25C) Symbol VCBO VCEO VEBO hFE* VCE(sat) VBE fT NF Cre Zrb Conditions IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCB = 10V, IE = -1mA IC = 10mA, IB = 1mA VCE = 10V, IC = 1mA VCB = 10V, IE = -1mA, f = 200MHz VCB = 10V, IE = -1mA, f = 5MHz VCE = 10V, IC = 1mA, f = 10.7MHz VCB = 10V, IE = -1mA, f = 2MHz 150 min 30 20 5 70 0.1 0.7 300 2.8 4 1.5 50 220 V V MHz dB pF typ max Unit V V V *h FE Rank classification B 70 ~ 140 C 110 ~ 220 hFE Rank 4.10.2 Optimum for RF amplification of FM/AM radios. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 3.50.1 (1.0) 2.00.2 4.50.1 R 0.9 R 0.7 Publication date: August 2002 SJC00111AED 1 2SC2206 PC -- Ta 500 12 Ta=25C 450 10 IB=100A 12.5 IC -- VCE 15.0 IC -- I B VCE=10V Ta=25C Collector power dissipation PC (mW) Collector current IC (mA) 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 8 80A Collector current IC (mA) 18 400 10.0 6 60A 7.5 4 40A 5.0 2 20A 2.5 0 0 6 12 0 0 20 40 60 80 100 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (A) IB -- VBE 120 VCE=10V Ta=25C 100 50 60 IC -- VBE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 VCE=10V VCE(sat) -- IC IC/IB=10 Collector current IC (mA) Base current IB (A) 80 40 Ta=75C 30 25C -25C 60 Ta=75C 0.3 25C 0.1 0.03 0.01 0.1 -25C 40 20 20 10 0 0 0.2 0.4 0.6 0.8 1.0 0 0 0.4 0.8 1.2 1.6 2.0 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) Collector current IC (mA) hFE -- IC 240 VCE=10V 400 350 300 250 200 150 100 50 0 0.1 0 - 0.1 - 0.3 fT -- I E 60 VCB=10V 6V Zrb -- IE Reverse transfer impedance Zrb () Ta=25C VCB=10V f=2MHz Ta=25C Forward current transfer ratio hFE 200 Transition frequency fT (MHz) 50 160 Ta=75C 25C 40 120 -25C 80 30 20 40 10 0.3 1 3 10 30 100 -1 -3 -10 -30 -100 0 - 0.1 - 0.3 -1 -3 -10 Collector current IC (mA) Emitter current IE (mA) Emitter current IE (mA) 2 SJC00111AED 2SC2206 Cre -- VCE Common emitter reverse transfer capacitance Cre (pF) 3.0 f=10.7MHz Ta=25C 2.5 20 24 PG -- IE f=100MHz VCE=10V Ta=25C 12 NF -- IE VCB=6V f=100MHz Rg=50 Ta=25C 10 2.0 IC=3mA 1.5 1mA 16 Noise figure NF (dB) -1 -3 -10 -30 -100 Power gain PG (dB) 8 12 6 1.0 8 4 0.5 4 2 0 0.1 0.3 1 3 10 30 100 0 - 0.1 - 0.3 0 - 0.1 - 0.3 -1 -3 -10 Collector to emitter voltage VCE (V) Emitter current IE (mA) Emitter current IE (mA) bie -- gie 24 0 bre -- gre Reverse transfer susceptance bre (mS) yie=gie+jbie VCE=10V yre=gre+jbre VCE=10V bfe -- gfe Forward transfer susceptance bfe (mS) f=10.7MHz 0 - 0.1mA f=10.7MHz 58 10.7 -1mA 100 Input susceptance bie (mS) 20 -4mA 16 IE=-1mA 10- 0.1 IE=-1mA -20 58 -2mA 100 -7mA 100 -2mA 58 - 0.2 -40 12 - 0.3 58 -60 IE=-4mA 100 58 8 f=10.7MHz 4 - 0.4 100 -80 - 0.5 -100 yfe=gfe+jbfe VCE=10V 0 20 40 60 80 100 0 0 8 16 24 32 40 - 0.6 - 0.5 -120 - 0.4 - 0.3 - 0.2 - 0.1 0 Input conductance gie (mS) Reverse transfer conductance gre (mS) Forward transfer conductance gfe (mS) boe -- goe 1.2 yoe=goe+jboe VCE=10V Output susceptance boe (mS) 1.0 0.8 IE=-1mA 100 0.6 58 0.4 0.2 f=10.7MHz 0 0 0.1 0.2 0.3 0.4 0.5 Output conductance goe (mS) SJC00111AED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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